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STP100N6F7
STP100N6F7

STP100N6F7

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Product Code: STP100N6F7
Availability: In Stock
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Price: $1.56
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Item specifics

  • Avalanche Energy Rating (Eas) 200 mJ
  • Base Part Number STP100
  • Case Connection DRAIN
  • Configuration SINGLE WITH BUILT-IN DIODE
  • Continuous Drain Current (ID) 100A
  • Current - Continuous Drain (Id) @ 25°C 100A Tc
  • Drain to Source Voltage (Vdss) 60V
  • Drain-source On Resistance-Max 0.0056Ohm
  • Drive Voltage (Max Rds On,Min Rds On) 10V
  • DS Breakdown Voltage-Min 60V
  • ECCN Code EAR99
  • FET Type N-Channel
  • Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds 1980pF @ 25V
  • JEDEC-95 Code TO-220AB
  • JESD-30 Code R-PSFM-T3
  • Lead Free Lead Free
  • Lifecycle Status ACTIVE (Last Updated: 8 months ago)
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • Mount Through Hole
  • Mounting Type Through Hole
  • Number of Elements 1
  • Number of Terminations 3
  • Operating Mode ENHANCEMENT MODE
  • Operating Temperature -55°C~175°C TJ
  • Package / Case TO-220-3
  • Packaging Tube
  • Part Status Active
  • Peak Reflow Temperature (Cel) NOT SPECIFIED
  • Power Dissipation-Max 125W Tc
  • Pulsed Drain Current-Max (IDM) 400A
  • Rds On (Max) @ Id, Vgs 5.6m Ω @ 50A, 10V
  • RoHS Status ROHS3 Compliant
  • Series STripFET™ F7
  • Terminal Position SINGLE
  • Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
  • Transistor Application SWITCHING
  • Transistor Element Material SILICON
  • Vgs (Max) ±20V
  • Vgs(th) (Max) @ Id 4V @ 250μA

Product Description

STMicroelectronics

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