ZXMN3B01FTA
Item specifics
- Contact Plating Tin
- Continuous Drain Current (ID) 2A
- Current - Continuous Drain (Id) @ 25°C 1.7A Ta
- Current Rating 2A
- Drain to Source Breakdown Voltage 30V
- Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
- ECCN Code EAR99
- Element Configuration Single
- Fall Time (Typ) 3.98 ns
- FET Type N-Channel
- Gate Charge (Qg) (Max) @ Vgs 2.93nC @ 4.5V
- Gate to Source Voltage (Vgs) 12V
- Height 1.02mm
- Input Capacitance (Ciss) (Max) @ Vds 258pF @ 15V
- JESD-609 Code e3
- Lead Free Lead Free
- Length 3.04mm
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- Mount Surface Mount
- Mounting Type Surface Mount
- Nominal Vgs 700 mV
- Number of Channels 1
- Number of Elements 1
- Number of Pins 3
- Number of Terminations 3
- Operating Mode ENHANCEMENT MODE
- Operating Temperature -55°C~150°C TJ
- Package / Case TO-236-3, SC-59, SOT-23-3
- Packaging Tape & Reel (TR)
- Part Status Active
- Pbfree Code yes
- Peak Reflow Temperature (Cel) 260
- Pin Count 3
- Power Dissipation 625mW
- Power Dissipation-Max 625mW Ta
- Published 2012
- Radiation Hardening No
- Rds On (Max) @ Id, Vgs 150m Ω @ 1.7A, 4.5V
- REACH SVHC No SVHC
- Resistance 150mOhm
- Rise Time 3.98ns
- RoHS Status ROHS3 Compliant
- Terminal Form GULL WING
- Terminal Position DUAL
- Threshold Voltage 700mV
- Time@Peak Reflow Temperature-Max (s) 40
- Transistor Application SWITCHING
- Transistor Element Material SILICON
- Turn On Delay Time 2.69 ns
- Turn-Off Delay Time 8 ns
- Vgs (Max) ±12V
- Vgs(th) (Max) @ Id 700mV @ 250μA
- Voltage - Rated DC 30V
- Weight 7.994566mg
- Width 1.4mm
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