IRFH8325TR2PBF

IRFH8325TR2PBF

Product Code: IRFH8325TR2PBF
Availability: In Stock
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Price: $10.03
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Item specifics

  • Continuous Drain Current (ID) 21A
  • Current - Continuous Drain (Id) @ 25°C 21A Ta 82A Tc
  • Drain to Source Breakdown Voltage 30V
  • Drain to Source Resistance 5mOhm
  • Drain to Source Voltage (Vdss) 30V
  • Element Configuration Single
  • Fall Time (Typ) 7.1 ns
  • FET Type N-Channel
  • Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V
  • Gate to Source Voltage (Vgs) 20V
  • Height 1.17mm
  • Input Capacitance 2.487nF
  • Input Capacitance (Ciss) (Max) @ Vds 2487pF @ 10V
  • Lead Free Lead Free
  • Length 5.85mm
  • Max Operating Temperature 150°C
  • Max Power Dissipation 3.6W
  • Min Operating Temperature -55°C
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • Mount Surface Mount
  • Mounting Type Surface Mount
  • Nominal Vgs 1.8 V
  • Number of Elements 1
  • Number of Pins 8
  • Package / Case 8-PowerTDFN
  • Packaging Cut Tape (CT)
  • Part Status Obsolete
  • Power Dissipation 3.6W
  • Published 2013
  • Radiation Hardening No
  • Rds On (Max) @ Id, Vgs 5mOhm @ 20A, 10V
  • Rds On Max 5 mΩ
  • REACH SVHC No SVHC
  • Recovery Time 24 ns
  • Resistance 5MOhm
  • Rise Time 16ns
  • RoHS Status RoHS Compliant
  • Series HEXFET®
  • Supplier Device Package PQFN (5x6)
  • Threshold Voltage 1.8V
  • Turn On Delay Time 12 ns
  • Turn-Off Delay Time 14 ns
  • Vgs(th) (Max) @ Id 2.35V @ 50μA
  • Width 5mm

Product Description

Infineon Technologies

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