SI1012X-T1-E3

SI1012X-T1-E3

Product Code: SI1012X-T1-E3
Availability: In Stock
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Price: $1.29 $7.34 -82%
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Item specifics

  • Continuous Drain Current (ID) 500mA
  • Current - Continuous Drain (Id) @ 25°C 500mA Ta
  • Drain to Source Breakdown Voltage 20V
  • Drain to Source Resistance 700mOhm
  • Drain to Source Voltage (Vdss) 20V
  • Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
  • Dual Supply Voltage 20V
  • Element Configuration Single
  • Fall Time (Typ) 5 ns
  • FET Type N-Channel
  • Gate Charge (Qg) (Max) @ Vgs 0.75nC @ 4.5V
  • Gate to Source Voltage (Vgs) 6V
  • Height 800μm
  • Lead Free Lead Free
  • Length 1.7mm
  • Max Operating Temperature 150°C
  • Min Operating Temperature -55°C
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • Mount Surface Mount
  • Mounting Type Surface Mount
  • Nominal Vgs 900 mV
  • Number of Channels 1
  • Number of Elements 1
  • Number of Pins 3
  • Operating Temperature -55°C~150°C TJ
  • Package / Case SC-89, SOT-490
  • Packaging Tape & Reel (TR)
  • Part Status Obsolete
  • Power Dissipation 250mW
  • Power Dissipation-Max 250mW Ta
  • Published 2014
  • Rds On (Max) @ Id, Vgs 700mOhm @ 600mA, 4.5V
  • Rds On Max 700 mΩ
  • REACH SVHC No SVHC
  • Resistance 700mOhm
  • Rise Time 5ns
  • RoHS Status ROHS3 Compliant
  • Series TrenchFET®
  • Supplier Device Package SC-89-3
  • Termination SMD/SMT
  • Threshold Voltage 900mV
  • Turn On Delay Time 5 ns
  • Turn-Off Delay Time 25 ns
  • Vgs (Max) ±6V
  • Vgs(th) (Max) @ Id 900mV @ 250μA
  • Weight 29.993795mg
  • Width 950μm

Product Description

Vishay Siliconix

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