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SIHG22N60E-GE3
SIHG22N60E-GE3

SIHG22N60E-GE3

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Product Code: SIHG22N60E-GE3
Availability: In Stock
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Price: $4.28 $4.72 -9%
0 sold. Only 4093 remain

Item specifics

  • Continuous Drain Current (ID) 21A
  • Current - Continuous Drain (Id) @ 25°C 21A Tc
  • Drain to Source Breakdown Voltage 600V
  • Drain to Source Resistance 180mOhm
  • Drain to Source Voltage (Vdss) 600V
  • Drive Voltage (Max Rds On,Min Rds On) 10V
  • Element Configuration Single
  • Fall Time (Typ) 54 ns
  • FET Type N-Channel
  • Gate Charge (Qg) (Max) @ Vgs 86nC @ 10V
  • Gate to Source Voltage (Vgs) 20V
  • Height 20.82mm
  • Input Capacitance 1.92nF
  • Input Capacitance (Ciss) (Max) @ Vds 1920pF @ 100V
  • Lead Free Lead Free
  • Length 15.87mm
  • Max Operating Temperature 150°C
  • Min Operating Temperature -55°C
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • Mount Through Hole
  • Mounting Type Through Hole
  • Number of Channels 1
  • Number of Elements 1
  • Number of Pins 3
  • Operating Temperature -55°C~150°C TJ
  • Package / Case TO-247-3
  • Packaging Tube
  • Part Status Active
  • Power Dissipation 227W
  • Power Dissipation-Max 227W Tc
  • Radiation Hardening No
  • Rds On (Max) @ Id, Vgs 180mOhm @ 11A, 10V
  • Rds On Max 180 mΩ
  • REACH SVHC Unknown
  • Resistance 180mOhm
  • Rise Time 68ns
  • RoHS Status ROHS3 Compliant
  • Supplier Device Package TO-247AC
  • Threshold Voltage 2V
  • Turn On Delay Time 18 ns
  • Turn-Off Delay Time 59 ns
  • Vgs (Max) ±30V
  • Vgs(th) (Max) @ Id 4V @ 250μA
  • Weight 38.000013g
  • Width 5.31mm

Product Description

Vishay Siliconix

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