STB120N4LF6
Item specifics
- Base Part Number STB120N
- Case Connection DRAIN
- Continuous Drain Current (ID) 80A
- Current - Continuous Drain (Id) @ 25°C 80A Tc
- Drain to Source Breakdown Voltage 40V
- Drive Voltage (Max Rds On,Min Rds On) 5V 10V
- ECCN Code EAR99
- Element Configuration Single
- Fall Time (Typ) 45 ns
- FET Type N-Channel
- Gate Charge (Qg) (Max) @ Vgs 80nC @ 10V
- Gate to Source Voltage (Vgs) 20V
- Height 4.6mm
- Input Capacitance (Ciss) (Max) @ Vds 4300pF @ 25V
- JESD-30 Code R-PSSO-G2
- JESD-609 Code e3
- Lead Free Lead Free
- Length 10.75mm
- Lifecycle Status ACTIVE (Last Updated: 7 months ago)
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- Mount Surface Mount
- Mounting Type Surface Mount
- Number of Elements 1
- Number of Pins 3
- Number of Terminations 2
- Operating Mode ENHANCEMENT MODE
- Operating Temperature -55°C~175°C TJ
- Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Packaging Tape & Reel (TR)
- Part Status Active
- Peak Reflow Temperature (Cel) 245
- Pin Count 4
- Power Dissipation 110W
- Power Dissipation-Max 110W Tc
- Radiation Hardening No
- Rds On (Max) @ Id, Vgs 4m Ω @ 40A, 10V
- REACH SVHC No SVHC
- Resistance 4MOhm
- Rise Time 95ns
- RoHS Status ROHS3 Compliant
- Series Automotive, AEC-Q101, DeepGATE™, STripFET™ VI
- Terminal Finish Matte Tin (Sn) - annealed
- Terminal Form GULL WING
- Threshold Voltage 1V
- Transistor Application SWITCHING
- Transistor Element Material SILICON
- Turn On Delay Time 15 ns
- Turn-Off Delay Time 125 ns
- Vgs (Max) ±20V
- Vgs(th) (Max) @ Id 3V @ 250μA
- Width 10.4mm
Product Description
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