SI2315BDS-T1-GE3

SI2315BDS-T1-GE3

Product Code: SI2315BDS-T1-GE3
Availability: In Stock
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Price: $0.64 $19.75 -97%
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Item specifics

  • Contact Plating Tin
  • Continuous Drain Current (ID) -3A
  • Current 3A
  • Current - Continuous Drain (Id) @ 25°C 3A Ta
  • Drain to Source Breakdown Voltage -12V
  • Drain-source On Resistance-Max 0.05Ohm
  • Drive Voltage (Max Rds On,Min Rds On) 4.5V
  • ECCN Code EAR99
  • Element Configuration Single
  • Fall Time (Typ) 35 ns
  • FET Type P-Channel
  • Gate Charge (Qg) (Max) @ Vgs 15nC @ 4.5V
  • Gate to Source Voltage (Vgs) 8V
  • Height 1.02mm
  • Input Capacitance (Ciss) (Max) @ Vds 715pF @ 6V
  • JESD-609 Code e3
  • Length 3.04mm
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • Mount Surface Mount
  • Mounting Type Surface Mount
  • Nominal Vgs -900 mV
  • Number of Channels 1
  • Number of Elements 1
  • Number of Pins 3
  • Number of Terminations 3
  • Operating Mode ENHANCEMENT MODE
  • Operating Temperature -55°C~150°C TJ
  • Package / Case TO-236-3, SC-59, SOT-23-3
  • Packaging Tape & Reel (TR)
  • Part Status Active
  • Pbfree Code yes
  • Peak Reflow Temperature (Cel) 260
  • Pin Count 3
  • Power Dissipation 750mW
  • Power Dissipation-Max 750mW Ta
  • Published 2013
  • Radiation Hardening No
  • Rds On (Max) @ Id, Vgs 50m Ω @ 3.85A, 4.5V
  • REACH SVHC Unknown
  • Rise Time 35ns
  • RoHS Status ROHS3 Compliant
  • Series TrenchFET®
  • Terminal Form GULL WING
  • Terminal Position DUAL
  • Threshold Voltage -900mV
  • Time@Peak Reflow Temperature-Max (s) 30
  • Transistor Element Material SILICON
  • Turn On Delay Time 15 ns
  • Turn-Off Delay Time 50 ns
  • Vgs (Max) ±8V
  • Vgs(th) (Max) @ Id 900mV @ 250μA
  • Voltage 12V
  • Weight 1.437803g
  • Width 1.4mm

Product Description

Vishay Siliconix

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