SI3447CDV-T1-E3

SI3447CDV-T1-E3

Product Code: SI3447CDV-T1-E3
Availability: In Stock
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Price: $2.77 $3.52 -21%
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Item specifics

  • Continuous Drain Current (ID) -7.8A
  • Current - Continuous Drain (Id) @ 25°C 7.8A Tc
  • Drain to Source Breakdown Voltage -12V
  • Drain to Source Resistance 36mOhm
  • Drain to Source Voltage (Vdss) 12V
  • Drive Voltage (Max Rds On,Min Rds On) 4.5V
  • Dual Supply Voltage 12V
  • Element Configuration Single
  • Fall Time (Typ) 20 ns
  • FET Type P-Channel
  • Gate Charge (Qg) (Max) @ Vgs 30nC @ 8V
  • Gate to Source Voltage (Vgs) 8V
  • Height 1mm
  • Input Capacitance 910pF
  • Input Capacitance (Ciss) (Max) @ Vds 910pF @ 6V
  • Length 3.05mm
  • Max Operating Temperature 150°C
  • Min Operating Temperature -55°C
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • Mount Surface Mount
  • Mounting Type Surface Mount
  • Nominal Vgs -1 V
  • Number of Channels 1
  • Number of Elements 1
  • Number of Pins 6
  • Operating Temperature -55°C~150°C TJ
  • Package / Case SOT-23-6 Thin, TSOT-23-6
  • Packaging Tape & Reel (TR)
  • Part Status Obsolete
  • Power Dissipation 2W
  • Power Dissipation-Max 2W Ta 3W Tc
  • Published 2016
  • Radiation Hardening No
  • Rds On (Max) @ Id, Vgs 36mOhm @ 6.3A, 4.5V
  • Rds On Max 36 mΩ
  • REACH SVHC Unknown
  • Rise Time 40ns
  • RoHS Status ROHS3 Compliant
  • Series TrenchFET®
  • Supplier Device Package 6-TSOP
  • Termination SMD/SMT
  • Threshold Voltage -1V
  • Turn On Delay Time 20 ns
  • Turn-Off Delay Time 35 ns
  • Vgs (Max) ±8V
  • Vgs(th) (Max) @ Id 1V @ 250μA
  • Weight 19.986414mg
  • Width 1.65mm

Product Description

Vishay Siliconix

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