SIHD7N60ET4-GE3

SIHD7N60ET4-GE3

Product Code: SIHD7N60ET4-GE3
Availability: In Stock
Viewed 3 times
Price: $5.20
0 sold. Only 8158 remain

Item specifics

  • Case Connection DRAIN
  • Continuous Drain Current (ID) 7A
  • Current - Continuous Drain (Id) @ 25°C 7A Tc
  • Drain Current-Max (Abs) (ID) 7A
  • Drain to Source Voltage (Vdss) 600V
  • Drain-source On Resistance-Max 0.6Ohm
  • Drive Voltage (Max Rds On,Min Rds On) 10V
  • DS Breakdown Voltage-Min 609V
  • Fall Time (Typ) 14 ns
  • FET Type N-Channel
  • Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
  • Gate to Source Voltage (Vgs) 30V
  • Input Capacitance (Ciss) (Max) @ Vds 680pF @ 100V
  • JEDEC-95 Code TO-252AA
  • JESD-30 Code R-PSSO-G2
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • Mount Surface Mount
  • Mounting Type Surface Mount
  • Number of Elements 1
  • Number of Pins 3
  • Number of Terminations 2
  • Operating Temperature -55°C~150°C TJ
  • Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
  • Packaging Tape & Reel (TR)
  • Part Status Active
  • Power Dissipation-Max 78W Tc
  • Pulsed Drain Current-Max (IDM) 18A
  • Rds On (Max) @ Id, Vgs 600m Ω @ 3.5A, 10V
  • Rise Time 13ns
  • RoHS Status RoHS Compliant
  • Series E
  • Terminal Form GULL WING
  • Transistor Application SWITCHING
  • Transistor Element Material SILICON
  • Turn On Delay Time 13 ns
  • Turn-Off Delay Time 24 ns
  • Vgs (Max) ±30V
  • Vgs(th) (Max) @ Id 4V @ 250μA

Product Description

Vishay Siliconix

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