NTTS2P03R2
Item specifics
- Configuration SINGLE WITH BUILT-IN DIODE
- Continuous Drain Current (ID) 2.1A
- Current - Continuous Drain (Id) @ 25°C 2.1A Ta
- Current Rating -2.48A
- Drain to Source Breakdown Voltage -30V
- Drain to Source Voltage (Vdss) 30V
- Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
- ECCN Code EAR99
- Fall Time (Typ) 20 ns
- FET Type P-Channel
- Gate Charge (Qg) (Max) @ Vgs 22nC @ 4.5V
- Gate to Source Voltage (Vgs) 20V
- Input Capacitance (Ciss) (Max) @ Vds 500pF @ 24V
- JESD-609 Code e0
- Lead Free Contains Lead
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- Mount Surface Mount
- Mounting Type Surface Mount
- Number of Elements 1
- Number of Pins 8
- Number of Terminations 8
- Operating Mode ENHANCEMENT MODE
- Operating Temperature -55°C~150°C TJ
- Package / Case 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- Packaging Tape & Reel (TR)
- Part Status Obsolete
- Peak Reflow Temperature (Cel) 240
- Pin Count 8
- Power Dissipation 780mW
- Power Dissipation-Max 600mW Ta
- Published 2005
- Qualification Status Not Qualified
- Rds On (Max) @ Id, Vgs 85m Ω @ 2.48A, 10V
- Reach Compliance Code not_compliant
- Rise Time 20ns
- RoHS Status Non-RoHS Compliant
- Terminal Finish Tin/Lead (Sn/Pb)
- Terminal Form GULL WING
- Terminal Position DUAL
- Time@Peak Reflow Temperature-Max (s) 30
- Transistor Application SWITCHING
- Transistor Element Material SILICON
- Turn-Off Delay Time 40 ns
- Vgs (Max) ±20V
- Vgs(th) (Max) @ Id 3V @ 250μA
- Voltage - Rated DC -30V
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