BUZ73ALHXKSA1

BUZ73ALHXKSA1

Product Code: BUZ73ALHXKSA1
Availability: In Stock
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Price: $16.80
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Item specifics

  • Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
  • Avalanche Energy Rating (Eas) 120 mJ
  • Configuration SINGLE WITH BUILT-IN DIODE
  • Continuous Drain Current (ID) 5.5A
  • Current - Continuous Drain (Id) @ 25°C 5.5A Tc
  • Drain to Source Voltage (Vdss) 200V
  • Drain-source On Resistance-Max 0.6Ohm
  • Drive Voltage (Max Rds On,Min Rds On) 5V
  • DS Breakdown Voltage-Min 200V
  • ECCN Code EAR99
  • Fall Time (Typ) 40 ns
  • FET Type N-Channel
  • Gate to Source Voltage (Vgs) 20V
  • Input Capacitance (Ciss) (Max) @ Vds 840pF @ 25V
  • JEDEC-95 Code TO-220AB
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • Mount Through Hole
  • Mounting Type Through Hole
  • Number of Elements 1
  • Number of Pins 3
  • Number of Terminations 3
  • Operating Mode ENHANCEMENT MODE
  • Operating Temperature -55°C~150°C TJ
  • Package / Case TO-220-3
  • Packaging Tube
  • Part Status Obsolete
  • Pbfree Code yes
  • Pin Count 3
  • Power Dissipation-Max 40W Tc
  • Published 2005
  • Pulsed Drain Current-Max (IDM) 22A
  • Radiation Hardening No
  • Rds On (Max) @ Id, Vgs 600m Ω @ 3.5A, 5V
  • Rise Time 60ns
  • RoHS Status RoHS Compliant
  • Series SIPMOS®
  • Terminal Position SINGLE
  • Transistor Element Material SILICON
  • Turn On Delay Time 15 ns
  • Turn-Off Delay Time 100 ns
  • Vgs (Max) ±20V
  • Vgs(th) (Max) @ Id 2V @ 1mA

Product Description

Infineon Technologies

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