IRF6614TR1PBF

IRF6614TR1PBF

Product Code: IRF6614TR1PBF
Availability: In Stock
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Price: $17.20
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Item specifics

  • Continuous Drain Current (ID) 10.1A
  • Current - Continuous Drain (Id) @ 25°C 12.7A Ta 55A Tc
  • Drain to Source Breakdown Voltage 40V
  • Drain to Source Resistance 9.9mOhm
  • Drain to Source Voltage (Vdss) 40V
  • Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
  • Dual Supply Voltage 40V
  • Fall Time (Typ) 3.6 ns
  • FET Type N-Channel
  • Gate Charge (Qg) (Max) @ Vgs 29nC @ 4.5V
  • Gate to Source Voltage (Vgs) 20V
  • Height 508μm
  • Input Capacitance 2.56nF
  • Input Capacitance (Ciss) (Max) @ Vds 2560pF @ 20V
  • Length 4.826mm
  • Max Operating Temperature 150°C
  • Min Operating Temperature -40°C
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • Mount Surface Mount
  • Mounting Type Surface Mount
  • Nominal Vgs 1.8 V
  • Number of Elements 1
  • Number of Pins 5
  • Operating Temperature -40°C~150°C TJ
  • Package / Case DirectFET™ Isometric ST
  • Packaging Tape & Reel (TR)
  • Part Status Obsolete
  • Power Dissipation 2.1W
  • Power Dissipation-Max 2.1W Ta 42W Tc
  • Published 2006
  • Radiation Hardening No
  • Rds On (Max) @ Id, Vgs 8.3mOhm @ 12.7A, 10V
  • Rds On Max 8.3 mΩ
  • REACH SVHC No SVHC
  • Recovery Time 23 ns
  • Rise Time 27ns
  • RoHS Status RoHS Compliant
  • Series HEXFET®
  • Supplier Device Package DIRECTFET™ ST
  • Termination SMD/SMT
  • Threshold Voltage 1.8V
  • Turn On Delay Time 13 ns
  • Turn-Off Delay Time 18 ns
  • Vgs (Max) ±20V
  • Vgs(th) (Max) @ Id 2.25V @ 250μA
  • Width 3.95mm

Product Description

Infineon Technologies

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