US5U35TR

US5U35TR

Product Code: US5U35TR
Availability: In Stock
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Price: $0.72 $1.22 -41%
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Item specifics

  • Continuous Drain Current (ID) 700mA
  • Current - Continuous Drain (Id) @ 25°C 700mA Ta
  • Drain Current-Max (Abs) (ID) 0.7A
  • Drain to Source Breakdown Voltage 25V
  • Drain to Source Voltage (Vdss) 45V
  • Drive Voltage (Max Rds On,Min Rds On) 4V 10V
  • ECCN Code EAR99
  • Element Configuration Single
  • Fall Time (Typ) 5 ns
  • FET Feature Schottky Diode (Isolated)
  • FET Type P-Channel
  • Gate Charge (Qg) (Max) @ Vgs 1.7nC @ 5V
  • Gate to Source Voltage (Vgs) 20V
  • Input Capacitance (Ciss) (Max) @ Vds 120pF @ 10V
  • JESD-609 Code e2
  • Lead Free Lead Free
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • Mount Surface Mount
  • Mounting Type Surface Mount
  • Number of Elements 1
  • Number of Pins 5
  • Number of Terminations 5
  • Operating Mode ENHANCEMENT MODE
  • Operating Temperature 150°C TJ
  • Package / Case 6-SMD (5 Leads), Flat Lead
  • Packaging Tape & Reel (TR)
  • Part Status Active
  • Pbfree Code yes
  • Peak Reflow Temperature (Cel) 260
  • Pin Count 5
  • Power Dissipation 700mW
  • Power Dissipation-Max 1W Ta
  • Published 2008
  • Radiation Hardening No
  • Rds On (Max) @ Id, Vgs 800m Ω @ 700mA, 10V
  • Resistance 1.4Ohm
  • Rise Time 5ns
  • RoHS Status ROHS3 Compliant
  • Terminal Finish Tin/Copper (Sn/Cu)
  • Terminal Position DUAL
  • Time@Peak Reflow Temperature-Max (s) 10
  • Transistor Application SWITCHING
  • Transistor Element Material SILICON
  • Turn On Delay Time 6 ns
  • Turn-Off Delay Time 17 ns
  • Vgs (Max) ±20V
  • Vgs(th) (Max) @ Id 2.5V @ 1mA

Product Description

ROHM Semiconductor

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