SUM110N04-03-E3
Item specifics
- Continuous Drain Current (ID) 110A
- Current - Continuous Drain (Id) @ 25°C 110A Tc
- Drain to Source Breakdown Voltage 40V
- Drain-source On Resistance-Max 0.0028Ohm
- Drive Voltage (Max Rds On,Min Rds On) 10V
- Dual Supply Voltage 40V
- ECCN Code EAR99
- Element Configuration Single
- Fall Time (Typ) 110 ns
- FET Type N-Channel
- Gate Charge (Qg) (Max) @ Vgs 250nC @ 10V
- Gate to Source Voltage (Vgs) 20V
- Height 4.83mm
- Input Capacitance (Ciss) (Max) @ Vds 8250pF @ 25V
- JESD-30 Code R-PSSO-G2
- JESD-609 Code e3
- Length 10.41mm
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- Mount Surface Mount
- Mounting Type Surface Mount
- Nominal Vgs 4 V
- Number of Channels 1
- Number of Elements 1
- Number of Pins 3
- Number of Terminations 2
- Operating Mode ENHANCEMENT MODE
- Operating Temperature -55°C~175°C TJ
- Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Packaging Tape & Reel (TR)
- Part Status Obsolete
- Pbfree Code yes
- Pin Count 4
- Power Dissipation 437.5W
- Power Dissipation-Max 3.75W Ta 375W Tc
- Published 2009
- Pulsed Drain Current-Max (IDM) 440A
- Radiation Hardening No
- Rds On (Max) @ Id, Vgs 2.8m Ω @ 30A, 10V
- REACH SVHC No SVHC
- Reverse Recovery Time 60 ns
- Rise Time 170ns
- RoHS Status ROHS3 Compliant
- Series TrenchFET®
- Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
- Terminal Form GULL WING
- Termination SMD/SMT
- Threshold Voltage 4V
- Transistor Application SWITCHING
- Transistor Element Material SILICON
- Turn On Delay Time 25 ns
- Turn-Off Delay Time 55 ns
- Vgs (Max) ±20V
- Vgs(th) (Max) @ Id 4V @ 250μA
- Weight 1.437803g
- Width 9.65mm
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