SIHG73N60AE-GE3
Item specifics
- Continuous Drain Current (ID) 60A
- Current - Continuous Drain (Id) @ 25°C 60A Tc
- Drain to Source Breakdown Voltage 600V
- Drive Voltage (Max Rds On,Min Rds On) 10V
- FET Type N-Channel
- Gate Charge (Qg) (Max) @ Vgs 394nC @ 10V
- Gate to Source Voltage (Vgs) 30V
- Height 25.11mm
- Input Capacitance (Ciss) (Max) @ Vds 5500pF @ 100V
- Max Junction Temperature (Tj) 150°C
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- Mounting Type Through Hole
- Number of Channels 1
- Operating Temperature -55°C~150°C TJ
- Package / Case TO-247-3
- Packaging Tube
- Part Status Active
- Power Dissipation 417W
- Power Dissipation-Max 417W Tc
- Rds On (Max) @ Id, Vgs 40m Ω @ 36.5A, 10V
- RoHS Status ROHS3 Compliant
- Series E
- Turn On Delay Time 43 ns
- Turn-Off Delay Time 212 ns
- Vgs (Max) ±30V
- Vgs(th) (Max) @ Id 4V @ 250μA
Product Description
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