ZDS020N60TB

ZDS020N60TB

Product Code: ZDS020N60TB
Availability: In Stock
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Price: $1.31 $10.41 -87%
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Item specifics

  • Configuration SINGLE WITH BUILT-IN DIODE
  • Continuous Drain Current (ID) 630mA
  • Current - Continuous Drain (Id) @ 25°C 630mA Tc
  • Drain Current-Max (Abs) (ID) 0.63A
  • Drain to Source Voltage (Vdss) 600V
  • Drain-source On Resistance-Max 5Ohm
  • Drive Voltage (Max Rds On,Min Rds On) 10V
  • DS Breakdown Voltage-Min 600V
  • ECCN Code EAR99
  • Fall Time (Typ) 65 ns
  • FET Type N-Channel
  • Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
  • Gate to Source Voltage (Vgs) 30V
  • Input Capacitance (Ciss) (Max) @ Vds 310pF @ 10V
  • Lead Free Lead Free
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • Mount Surface Mount
  • Mounting Type Surface Mount
  • Number of Elements 1
  • Number of Pins 8
  • Number of Terminations 8
  • Operating Mode ENHANCEMENT MODE
  • Operating Temperature 150°C TJ
  • Package / Case 8-SOIC (0.154, 3.90mm Width)
  • Packaging Tape & Reel (TR)
  • Part Status Not For New Designs
  • Peak Reflow Temperature (Cel) 260
  • Pin Count 8
  • Power Dissipation-Max 2W Tc
  • Published 2012
  • Pulsed Drain Current-Max (IDM) 2.5A
  • Radiation Hardening No
  • Rds On (Max) @ Id, Vgs 5 Ω @ 500mA, 10V
  • Rise Time 20ns
  • RoHS Status ROHS3 Compliant
  • Terminal Form GULL WING
  • Terminal Position DUAL
  • Time@Peak Reflow Temperature-Max (s) 10
  • Transistor Application SWITCHING
  • Transistor Element Material SILICON
  • Turn On Delay Time 25 ns
  • Turn-Off Delay Time 65 ns
  • Vgs (Max) ±30V
  • Vgs(th) (Max) @ Id 4V @ 1mA

Product Description

ROHM Semiconductor

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