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2SK3707
2SK3707

2SK3707

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Product Code: 2SK3707
Availability: In Stock
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Price: $13.79
0 sold. Only 9945 remain

Item specifics

  • Avalanche Energy Rating (Eas) 125 mJ
  • Configuration SINGLE WITH BUILT-IN DIODE
  • Continuous Drain Current (ID) 20A
  • Current - Continuous Drain (Id) @ 25°C 20A Ta
  • Drain to Source Voltage (Vdss) 100V
  • Drain-source On Resistance-Max 0.08Ohm
  • Drive Voltage (Max Rds On,Min Rds On) 4V 10V
  • DS Breakdown Voltage-Min 100V
  • Fall Time (Typ) 60 ns
  • FET Type N-Channel
  • Gate Charge (Qg) (Max) @ Vgs 44nC @ 10V
  • Gate to Source Voltage (Vgs) 20V
  • HTS Code 8541.29.00.95
  • Input Capacitance (Ciss) (Max) @ Vds 2150pF @ 20V
  • JEDEC-95 Code TO-220AB
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • Mount Through Hole
  • Mounting Type Through Hole
  • Number of Elements 1
  • Number of Pins 3
  • Number of Terminations 3
  • Operating Mode ENHANCEMENT MODE
  • Operating Temperature 150°C TJ
  • Package / Case TO-220-3 Full Pack
  • Packaging Bulk
  • Part Status Obsolete
  • Pin Count 3
  • Power Dissipation 25W
  • Power Dissipation-Max 2W Ta 25W Tc
  • Published 2013
  • Pulsed Drain Current-Max (IDM) 80A
  • Radiation Hardening No
  • Rds On (Max) @ Id, Vgs 60m Ω @ 10A, 10V
  • Rise Time 30ns
  • RoHS Status RoHS Compliant
  • Terminal Finish Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
  • Terminal Position SINGLE
  • Transistor Application SWITCHING
  • Transistor Element Material SILICON
  • Turn On Delay Time 19.5 ns
  • Turn-Off Delay Time 185 ns
  • Vgs (Max) ±20V

Product Description

ON Semiconductor

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