IPL65R130C7AUMA1
Item specifics
- Avalanche Energy Rating (Eas) 89 mJ
- Case Connection DRAIN
- Continuous Drain Current (ID) 15A
- Current - Continuous Drain (Id) @ 25°C 15A Tc
- Drain to Source Breakdown Voltage 650V
- Drive Voltage (Max Rds On,Min Rds On) 10V
- Element Configuration Single
- Fall Time (Typ) 12 ns
- FET Type N-Channel
- Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
- Gate to Source Voltage (Vgs) 20V
- Halogen Free Halogen Free
- Input Capacitance (Ciss) (Max) @ Vds 1670pF @ 400V
- JESD-609 Code e3
- Lead Free Contains Lead
- Max Dual Supply Voltage 650V
- Moisture Sensitivity Level (MSL) 2A (4 Weeks)
- Mount Surface Mount
- Mounting Type Surface Mount
- Number of Channels 1
- Number of Elements 1
- Number of Pins 4
- Number of Terminations 4
- Operating Mode ENHANCEMENT MODE
- Operating Temperature -40°C~150°C TJ
- Package / Case 4-PowerTSFN
- Packaging Tape & Reel (TR)
- Part Status Active
- Peak Reflow Temperature (Cel) NOT SPECIFIED
- Power Dissipation 102W
- Power Dissipation-Max 102W Tc
- Published 2010
- Pulsed Drain Current-Max (IDM) 75A
- Rds On (Max) @ Id, Vgs 130m Ω @ 4.4A, 10V
- Reach Compliance Code not_compliant
- Rise Time 5.3ns
- RoHS Status ROHS3 Compliant
- Series CoolMOS™ C7
- Terminal Finish Tin (Sn)
- Terminal Form NO LEAD
- Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
- Transistor Application SWITCHING
- Transistor Element Material SILICON
- Turn On Delay Time 11 ns
- Turn-Off Delay Time 87 ns
- Vgs (Max) ±20V
- Vgs(th) (Max) @ Id 4V @ 440μA
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