NIF9N05CLT3G
Item specifics
- Additional Feature LOGIC LEVEL COMPATIBLE
- Case Connection DRAIN
- Configuration SINGLE WITH BUILT-IN DIODE AND RESISTOR
- Continuous Drain Current (ID) 2.6A
- Current - Continuous Drain (Id) @ 25°C 2.6A Ta
- Current Rating 2.6A
- Drain to Source Breakdown Voltage 52V
- Drain to Source Voltage (Vdss) 59V
- Drive Voltage (Max Rds On,Min Rds On) 3V 10V
- ECCN Code EAR99
- Fall Time (Typ) 290 ns
- FET Type N-Channel
- Gate Charge (Qg) (Max) @ Vgs 7nC @ 4.5V
- Gate to Source Voltage (Vgs) 15V
- Input Capacitance (Ciss) (Max) @ Vds 250pF @ 35V
- JESD-609 Code e3
- Lead Free Lead Free
- Lifecycle Status CONSULT SALES OFFICE (Last Updated: 4 days ago)
- Moisture Sensitivity Level (MSL) 3 (168 Hours)
- Mount Surface Mount
- Mounting Type Surface Mount
- Number of Elements 1
- Number of Pins 4
- Number of Terminations 4
- Operating Mode ENHANCEMENT MODE
- Operating Temperature -55°C~150°C TJ
- Package / Case TO-261-4, TO-261AA
- Packaging Tape & Reel (TR)
- Part Status Obsolete
- Pbfree Code yes
- Peak Reflow Temperature (Cel) 260
- Pin Count 4
- Power Dissipation 1.69W
- Power Dissipation-Max 1.69W Ta
- Published 2006
- Radiation Hardening No
- Rds On (Max) @ Id, Vgs 125m Ω @ 2.6A, 10V
- Rise Time 290ns
- RoHS Status RoHS Compliant
- Terminal Finish Tin (Sn)
- Terminal Form GULL WING
- Terminal Position DUAL
- Time@Peak Reflow Temperature-Max (s) 40
- Transistor Application SWITCHING
- Transistor Element Material SILICON
- Turn-Off Delay Time 1.54 μs
- Vgs (Max) ±15V
- Vgs(th) (Max) @ Id 2.5V @ 100μA
- Voltage - Rated DC 52V
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