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SQD45N05-20L-GE3
SQD45N05-20L-GE3

SQD45N05-20L-GE3

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Product Code: SQD45N05-20L-GE3
Availability: In Stock
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Price: $0.23
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Item specifics

  • Case Connection DRAIN
  • Continuous Drain Current (ID) 50A
  • Current - Continuous Drain (Id) @ 25°C 50A Tc
  • Drain to Source Breakdown Voltage 50V
  • Drain-source On Resistance-Max 0.02Ohm
  • Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
  • ECCN Code EAR99
  • Element Configuration Single
  • Fall Time (Typ) 7 ns
  • FET Type N-Channel
  • Gate Charge (Qg) (Max) @ Vgs 43nC @ 10V
  • Gate to Source Voltage (Vgs) 20V
  • Input Capacitance (Ciss) (Max) @ Vds 1800pF @ 25V
  • JESD-30 Code R-PSSO-G2
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • Mount Surface Mount
  • Mounting Type Surface Mount
  • Number of Elements 1
  • Number of Terminations 2
  • Operating Mode ENHANCEMENT MODE
  • Operating Temperature -55°C~175°C TJ
  • Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
  • Packaging Tape & Reel (TR)
  • Part Status Active
  • Pbfree Code yes
  • Peak Reflow Temperature (Cel) 260
  • Pin Count 4
  • Power Dissipation 2.5W
  • Power Dissipation-Max 2.5W Ta 75W Tc
  • Published 2008
  • Qualification Status Not Qualified
  • Rds On (Max) @ Id, Vgs 18m Ω @ 20A, 10V
  • Rise Time 10ns
  • RoHS Status ROHS3 Compliant
  • Series TrenchFET®
  • Terminal Form GULL WING
  • Time@Peak Reflow Temperature-Max (s) 40
  • Transistor Element Material SILICON
  • Turn-Off Delay Time 32 ns
  • Vgs (Max) ±20V
  • Vgs(th) (Max) @ Id 2.5V @ 250μA

Product Description

Vishay Siliconix

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