RMW180N03TB

RMW180N03TB

Product Code: RMW180N03TB
Availability: In Stock
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Price: $2.35 $14.24 -83%
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Item specifics

  • Configuration SINGLE WITH BUILT-IN DIODE
  • Continuous Drain Current (ID) 18A
  • Drain to Source Breakdown Voltage 30V
  • Drain to Source Resistance 5.6mOhm
  • Drain to Source Voltage (Vdss) 30V
  • ECCN Code EAR99
  • Fall Time (Typ) 12 ns
  • FET Technology METAL-OXIDE SEMICONDUCTOR
  • Gate to Source Voltage (Vgs) 20V
  • Input Capacitance 1.25nF
  • Lead Free Lead Free
  • Max Operating Temperature 150°C
  • Max Power Dissipation 3W
  • Min Operating Temperature -55°C
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • Mount Surface Mount
  • Number of Elements 1
  • Number of Pins 8
  • Number of Terminations 8
  • Operating Mode ENHANCEMENT MODE
  • Package / Case SMD/SMT
  • Packaging Tape & Reel (TR)
  • Part Status Obsolete
  • Pbfree Code yes
  • Peak Reflow Temperature (Cel) 260
  • Pin Count 8
  • Polarity/Channel Type N-CHANNEL
  • Power Dissipation 3W
  • Published 2011
  • Pulsed Drain Current-Max (IDM) 72A
  • Radiation Hardening No
  • Rds On Max 5.6 mΩ
  • Rise Time 39ns
  • RoHS Status RoHS Compliant
  • Terminal Form FLAT
  • Terminal Position DUAL
  • Time@Peak Reflow Temperature-Max (s) 10
  • Transistor Application SWITCHING
  • Turn On Delay Time 14 ns
  • Turn-Off Delay Time 39 ns

Product Description

ROHM Semiconductor

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