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TK39J60W5,S1VQ
TK39J60W5,S1VQ

TK39J60W5,S1VQ

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Product Code: TK39J60W5,S1VQ
Availability: In Stock
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Price: $14.23 $6.80 --109%
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Item specifics

  • Capacitance 4.1nF
  • Continuous Drain Current (ID) 38.8A
  • Current - Continuous Drain (Id) @ 25°C 38.8A Ta
  • Drain to Source Breakdown Voltage 600V
  • Drain to Source Resistance 55mOhm
  • Drain to Source Voltage (Vdss) 600V
  • Drive Voltage (Max Rds On,Min Rds On) 10V
  • Element Configuration Single
  • Fall Time (Typ) 9 ns
  • FET Feature Super Junction
  • FET Type N-Channel
  • Gate Charge (Qg) (Max) @ Vgs 135nC @ 10V
  • Gate to Source Voltage (Vgs) 30V
  • Input Capacitance 4.1nF
  • Input Capacitance (Ciss) (Max) @ Vds 4100pF @ 300V
  • Max Operating Temperature 150°C
  • Min Operating Temperature -55°C
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • Mount Through Hole
  • Mounting Type Through Hole
  • Operating Temperature 150°C TJ
  • Package / Case TO-3P-3, SC-65-3
  • Packaging Tube
  • Part Status Active
  • Power Dissipation 270W
  • Power Dissipation-Max 270W Tc
  • Published 2013
  • Rds On (Max) @ Id, Vgs 65mOhm @ 19.4A, 10V
  • Rds On Max 65 mΩ
  • Rise Time 50ns
  • RoHS Status RoHS Compliant
  • Series DTMOSIV
  • Supplier Device Package TO-3P(N)
  • Turn-Off Delay Time 200 ns
  • Vgs (Max) ±30V
  • Vgs(th) (Max) @ Id 3.7V @ 1.9mA

Product Description

Toshiba Semiconductor and Storage

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