SQ2308CES-T1_GE3

SQ2308CES-T1_GE3

Product Code: SQ2308CES-T1_GE3
Availability: In Stock
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Price: $19.70
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Item specifics

  • Configuration SINGLE WITH BUILT-IN DIODE
  • Continuous Drain Current (ID) 2.3A
  • Current - Continuous Drain (Id) @ 25°C 2.3A Tc
  • Drain to Source Breakdown Voltage 60V
  • Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
  • ECCN Code EAR99
  • FET Type N-Channel
  • Gate Charge (Qg) (Max) @ Vgs 5.3nC @ 10V
  • Gate to Source Voltage (Vgs) 20V
  • Height 1.12mm
  • Input Capacitance (Ciss) (Max) @ Vds 205pF @ 30V
  • JEDEC-95 Code TO-236AB
  • JESD-30 Code R-PDSO-G3
  • Max Junction Temperature (Tj) 175°C
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • Mounting Type Surface Mount
  • Number of Channels 1
  • Number of Elements 1
  • Number of Terminations 3
  • Operating Mode ENHANCEMENT MODE
  • Operating Temperature -55°C~175°C TJ
  • Package / Case TO-236-3, SC-59, SOT-23-3
  • Packaging Tape & Reel (TR)
  • Part Status Active
  • Peak Reflow Temperature (Cel) NOT SPECIFIED
  • Power Dissipation 2W
  • Power Dissipation-Max 2W Tc
  • Published 2016
  • Rds On (Max) @ Id, Vgs 150m Ω @ 2.3A, 10V
  • Reach Compliance Code unknown
  • RoHS Status ROHS3 Compliant
  • Series Automotive, AEC-Q101, TrenchFET®
  • Surface Mount YES
  • Terminal Form GULL WING
  • Terminal Position DUAL
  • Threshold Voltage 2V
  • Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
  • Transistor Element Material SILICON
  • Turn On Delay Time 4 ns
  • Turn-Off Delay Time 12 ns
  • Vgs (Max) ±20V
  • Vgs(th) (Max) @ Id 2.5V @ 250μA

Product Description

Vishay Siliconix

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