IRF630NPBF
Item specifics
- Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
- Avalanche Energy Rating (Eas) 94 mJ
- Case Connection DRAIN
- Continuous Drain Current (ID) 9.3A
- Current - Continuous Drain (Id) @ 25°C 9.3A Tc
- Current Rating 9.3A
- Drain to Source Breakdown Voltage 200V
- Drive Voltage (Max Rds On,Min Rds On) 10V
- Dual Supply Voltage 200V
- ECCN Code EAR99
- Element Configuration Single
- Fall Time (Typ) 15 ns
- FET Type N-Channel
- Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
- Gate to Source Voltage (Vgs) 20V
- Height 8.77mm
- Input Capacitance (Ciss) (Max) @ Vds 575pF @ 25V
- JEDEC-95 Code TO-220AB
- JESD-609 Code e3
- Lead Free Contains Lead, Lead Free
- Length 10.54mm
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- Mount Through Hole
- Mounting Type Through Hole
- Nominal Vgs 4 V
- Number of Elements 1
- Number of Pins 3
- Number of Terminations 3
- Operating Mode ENHANCEMENT MODE
- Operating Temperature -55°C~175°C TJ
- Package / Case TO-220-3
- Packaging Tube
- Part Status Active
- Peak Reflow Temperature (Cel) 250
- Power Dissipation 82W
- Power Dissipation-Max 82W Tc
- Published 2004
- Radiation Hardening No
- Rds On (Max) @ Id, Vgs 300m Ω @ 5.4A, 10V
- REACH SVHC No SVHC
- Recovery Time 176 ns
- Resistance 300mOhm
- Rise Time 14ns
- RoHS Status ROHS3 Compliant
- Series HEXFET®
- Terminal Finish MATTE TIN OVER NICKEL
- Termination Through Hole
- Threshold Voltage 4V
- Time@Peak Reflow Temperature-Max (s) 30
- Transistor Application SWITCHING
- Transistor Element Material SILICON
- Turn On Delay Time 7.9 ns
- Turn-Off Delay Time 27 ns
- Vgs (Max) ±20V
- Vgs(th) (Max) @ Id 4V @ 250μA
- Voltage - Rated DC 200V
- Width 4.69mm
Product Description
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