IRC644PBF
Item specifics
- Avalanche Energy Rating (Eas) 550 mJ
- Case Connection DRAIN
- Configuration SINGLE
- Continuous Drain Current (ID) 14A
- Current - Continuous Drain (Id) @ 25°C 14A Tc
- Drain to Source Voltage (Vdss) 250V
- Drain-source On Resistance-Max 0.28Ohm
- Drive Voltage (Max Rds On,Min Rds On) 10V
- DS Breakdown Voltage-Min 250V
- ECCN Code EAR99
- Fall Time (Typ) 29 ns
- FET Feature Current Sensing
- FET Type N-Channel
- Gate Charge (Qg) (Max) @ Vgs 65nC @ 10V
- Gate to Source Voltage (Vgs) 20V
- Height 9.02mm
- Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 25V
- JESD-30 Code R-PSFM-T5
- Length 10.67mm
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- Mount Through Hole
- Mounting Type Through Hole
- Number of Channels 1
- Number of Elements 1
- Number of Terminations 5
- Operating Mode ENHANCEMENT MODE
- Operating Temperature -55°C~150°C TJ
- Package / Case TO-220-5
- Packaging Tube
- Part Status Obsolete
- Peak Reflow Temperature (Cel) 260
- Pin Count 5
- Power Dissipation-Max 125W Tc
- Published 1997
- Pulsed Drain Current-Max (IDM) 56A
- Qualification Status Not Qualified
- Rds On (Max) @ Id, Vgs 280m Ω @ 8.4A, 10V
- Reach Compliance Code unknown
- Rise Time 37ns
- RoHS Status ROHS3 Compliant
- Series HEXFET®
- Terminal Position SINGLE
- Time@Peak Reflow Temperature-Max (s) 40
- Transistor Application SWITCHING
- Transistor Element Material SILICON
- Turn On Delay Time 12 ns
- Turn-Off Delay Time 49 ns
- Vgs (Max) ±20V
- Vgs(th) (Max) @ Id 4V @ 250μA
- Weight 3.000003g
- Width 4.83mm
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