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IPA50R650CE
IPA50R650CE

IPA50R650CE

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Product Code: IPA50R650CE
Availability: In Stock
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Price: $6.54
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Item specifics

  • Avalanche Energy Rating (Eas) 102 mJ
  • Case Connection ISOLATED
  • Configuration SINGLE WITH BUILT-IN DIODE
  • Current - Continuous Drain (Id) @ 25°C 6.1A Tc
  • Drain Current-Max (Abs) (ID) 6.1A
  • Drain to Source Voltage (Vdss) 500V
  • Drain-source On Resistance-Max 0.65Ohm
  • Drive Voltage (Max Rds On,Min Rds On) 13V
  • DS Breakdown Voltage-Min 500V
  • FET Feature Super Junction
  • FET Type N-Channel
  • Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds 342pF @ 100V
  • JEDEC-95 Code TO-220AB
  • JESD-30 Code R-PSFM-T3
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • Mounting Type Through Hole
  • Number of Elements 1
  • Number of Terminations 3
  • Operating Mode ENHANCEMENT MODE
  • Operating Temperature -40°C~150°C TJ
  • Package / Case TO-220-3 Full Pack
  • Packaging Tube
  • Part Status Obsolete
  • Pbfree Code yes
  • Peak Reflow Temperature (Cel) NOT SPECIFIED
  • Pin Count 3
  • Power Dissipation-Max 27.2W Tc
  • Published 2013
  • Pulsed Drain Current-Max (IDM) 19A
  • Rds On (Max) @ Id, Vgs 650m Ω @ 1.8A, 13V
  • Reach Compliance Code compliant
  • RoHS Status RoHS Compliant
  • Series CoolMOS™
  • Surface Mount NO
  • Terminal Position SINGLE
  • Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
  • Transistor Application SWITCHING
  • Transistor Element Material SILICON
  • Vgs (Max) ±20V
  • Vgs(th) (Max) @ Id 3.5V @ 150μA

Product Description

Infineon Technologies

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