IRLL2705TR

IRLL2705TR

Product Code: IRLL2705TR
Availability: In Stock
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Price: $13.16
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Item specifics

  • Additional Feature LOGIC LEVEL COMPATIBLE
  • Avalanche Energy Rating (Eas) 110 mJ
  • Case Connection DRAIN
  • Configuration SINGLE
  • Current - Continuous Drain (Id) @ 25°C 3.8A Ta
  • Drain Current-Max (Abs) (ID) 5.2A
  • Drain to Source Voltage (Vdss) 55V
  • Drain-source On Resistance-Max 0.051Ohm
  • DS Breakdown Voltage-Min 55V
  • ECCN Code EAR99
  • FET Type N-Channel
  • Gate Charge (Qg) (Max) @ Vgs 48nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds 870pF @ 25V
  • JESD-30 Code R-PDSO-G4
  • JESD-609 Code e3
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • Mounting Type Surface Mount
  • Number of Elements 1
  • Number of Terminations 4
  • Operating Mode ENHANCEMENT MODE
  • Package / Case TO-261-4, TO-261AA
  • Packaging Cut Tape (CT)
  • Part Status Obsolete
  • Peak Reflow Temperature (Cel) 260
  • Published 1999
  • Pulsed Drain Current-Max (IDM) 30A
  • Qualification Status Not Qualified
  • Rds On (Max) @ Id, Vgs 40m Ω @ 3.8A, 10V
  • RoHS Status Non-RoHS Compliant
  • Series HEXFET®
  • Surface Mount YES
  • Terminal Finish Matte Tin (Sn)
  • Terminal Form GULL WING
  • Terminal Position DUAL
  • Time@Peak Reflow Temperature-Max (s) 30
  • Transistor Element Material SILICON
  • Vgs(th) (Max) @ Id 2V @ 250μA

Product Description

Infineon Technologies

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