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TK35N65W,S1F
TK35N65W,S1F

TK35N65W,S1F

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Product Code: TK35N65W,S1F
Availability: In Stock
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Price: $7.56 $15.99 -53%
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Item specifics

  • Continuous Drain Current (ID) 35A
  • Current - Continuous Drain (Id) @ 25°C 35A Ta
  • Drain to Source Breakdown Voltage 650V
  • Drain to Source Resistance 68mOhm
  • Drain to Source Voltage (Vdss) 650V
  • Drive Voltage (Max Rds On,Min Rds On) 10V
  • Element Configuration Single
  • Fall Time (Typ) 8 ns
  • FET Type N-Channel
  • Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V
  • Gate to Source Voltage (Vgs) 30V
  • Input Capacitance 4.1nF
  • Input Capacitance (Ciss) (Max) @ Vds 4100pF @ 300V
  • Max Operating Temperature 150°C
  • Min Operating Temperature -55°C
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • Mount Through Hole
  • Mounting Type Through Hole
  • Number of Channels 1
  • Number of Pins 3
  • Operating Temperature 150°C TJ
  • Package / Case TO-247-3
  • Packaging Tube
  • Part Status Active
  • Power Dissipation-Max 270W Tc
  • Published 2014
  • Radiation Hardening No
  • Rds On (Max) @ Id, Vgs 80mOhm @ 17.5A, 10V
  • Rds On Max 80 mΩ
  • Rise Time 30ns
  • RoHS Status RoHS Compliant
  • Series DTMOSIV
  • Supplier Device Package TO-247
  • Turn On Delay Time 70 ns
  • Turn-Off Delay Time 150 ns
  • Vgs (Max) ±30V
  • Vgs(th) (Max) @ Id 3.5V @ 2.1mA
  • Weight 38.000013g

Product Description

Toshiba Semiconductor and Storage

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