APT30M19JVR

APT30M19JVR

Product Code: APT30M19JVR
Availability: In Stock
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Price: $3.30
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Item specifics

  • Additional Feature HIGH VOLTAGE
  • Avalanche Energy Rating (Eas) 3600 mJ
  • Case Connection ISOLATED
  • Configuration SINGLE WITH BUILT-IN DIODE
  • Continuous Drain Current (ID) 130A
  • Current - Continuous Drain (Id) @ 25°C 130A Tc
  • Current Rating 130A
  • Drive Voltage (Max Rds On,Min Rds On) 10V
  • ECCN Code EAR99
  • Fall Time (Typ) 10 ns
  • FET Type N-Channel
  • Gate Charge (Qg) (Max) @ Vgs 975nC @ 10V
  • Gate to Source Voltage (Vgs) 30V
  • Input Capacitance (Ciss) (Max) @ Vds 21600pF @ 25V
  • Lead Free Lead Free
  • Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • Mount Chassis Mount, Screw
  • Mounting Type Chassis Mount
  • Number of Elements 1
  • Number of Pins 4
  • Number of Terminations 4
  • Operating Mode ENHANCEMENT MODE
  • Operating Temperature -55°C~150°C TJ
  • Package / Case SOT-227-4, miniBLOC
  • Packaging Tube
  • Part Status Active
  • Pbfree Code yes
  • Pin Count 4
  • Power Dissipation 700W
  • Power Dissipation-Max 700W Tc
  • Published 1997
  • Pulsed Drain Current-Max (IDM) 520A
  • Radiation Hardening No
  • Rds On (Max) @ Id, Vgs 19m Ω @ 500mA, 10V
  • Rise Time 33ns
  • RoHS Status RoHS Compliant
  • Series POWER MOS V®
  • Terminal Form UNSPECIFIED
  • Terminal Position UPPER
  • Transistor Application SWITCHING
  • Transistor Element Material SILICON
  • Turn On Delay Time 22 ns
  • Turn-Off Delay Time 70 ns
  • Vgs (Max) ±30V
  • Vgs(th) (Max) @ Id 4V @ 5mA
  • Voltage - Rated DC 300V

Product Description

Microsemi Corporation

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