ZXM62P03E6TC

ZXM62P03E6TC

Product Code: ZXM62P03E6TC
Availability: In Stock
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Price: $14.09
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Item specifics

  • Configuration SINGLE WITH BUILT-IN DIODE
  • Continuous Drain Current (ID) 1.5A
  • Current - Continuous Drain (Id) @ 25°C 1.5A Ta
  • Drain to Source Breakdown Voltage -30V
  • Drain to Source Voltage (Vdss) 30V
  • Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
  • ECCN Code EAR99
  • Fall Time (Typ) 6.4 ns
  • FET Type P-Channel
  • Gate Charge (Qg) (Max) @ Vgs 10.2nC @ 10V
  • Gate to Source Voltage (Vgs) 12V
  • Height 1.3mm
  • Input Capacitance (Ciss) (Max) @ Vds 330pF @ 25V
  • JESD-609 Code e3
  • Length 3.1mm
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • Mount Surface Mount
  • Mounting Type Surface Mount
  • Number of Channels 1
  • Number of Elements 1
  • Number of Pins 6
  • Number of Terminations 6
  • Operating Mode ENHANCEMENT MODE
  • Operating Temperature -55°C~150°C TJ
  • Package / Case SOT-23-6
  • Packaging Tape & Reel (TR)
  • Part Status Obsolete
  • Pbfree Code yes
  • Peak Reflow Temperature (Cel) 260
  • Pin Count 6
  • Power Dissipation 625mW
  • Power Dissipation-Max 625mW Ta
  • Published 2006
  • Radiation Hardening No
  • Rds On (Max) @ Id, Vgs 230m Ω @ 800mA, 4.5V
  • Rise Time 6.4ns
  • RoHS Status ROHS3 Compliant
  • Terminal Finish Matte Tin (Sn)
  • Terminal Form GULL WING
  • Terminal Position DUAL
  • Time@Peak Reflow Temperature-Max (s) 40
  • Transistor Application SWITCHING
  • Transistor Element Material SILICON
  • Turn On Delay Time 2.8 ns
  • Turn-Off Delay Time 13.9 ns
  • Vgs (Max) ±20V
  • Vgs(th) (Max) @ Id 1V @ 250μA
  • Weight 14.996898mg
  • Width 1.8mm

Product Description

Diodes Incorporated

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