TPC8113(TE12L,Q)

TPC8113(TE12L,Q)

Product Code: TPC8113(TE12L,Q)
Availability: In Stock
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Price: $6.59
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Item specifics

  • Continuous Drain Current (ID) 11A
  • Current - Continuous Drain (Id) @ 25°C 11A Ta
  • Drain to Source Breakdown Voltage -30V
  • Drain to Source Resistance 10mOhm
  • Drain to Source Voltage (Vdss) 30V
  • Drive Voltage (Max Rds On,Min Rds On) 4V 10V
  • Fall Time (Typ) 120 ns
  • FET Type P-Channel
  • Gate Charge (Qg) (Max) @ Vgs 107nC @ 10V
  • Gate to Source Voltage (Vgs) 20V
  • Input Capacitance 4.5nF
  • Input Capacitance (Ciss) (Max) @ Vds 4500pF @ 10V
  • Max Operating Temperature 150°C
  • Min Operating Temperature -55°C
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • Mount Surface Mount
  • Mounting Type Surface Mount
  • Number of Elements 1
  • Number of Pins 8
  • Operating Temperature 150°C TJ
  • Package / Case 8-SOIC (0.173, 4.40mm Width)
  • Packaging Tape & Reel (TR)
  • Part Status Obsolete
  • Power Dissipation 1.9W
  • Power Dissipation-Max 1W Ta
  • Published 2009
  • Radiation Hardening No
  • Rds On (Max) @ Id, Vgs 10mOhm @ 5.5A, 10V
  • Rds On Max 10 mΩ
  • Rise Time 6ns
  • RoHS Status RoHS Compliant
  • Supplier Device Package 8-SOP (5.5x6.0)
  • Vgs (Max) ±20V
  • Vgs(th) (Max) @ Id 2V @ 1mA

Product Description

Toshiba Semiconductor and Storage

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