ZXM64N03XTC
Item specifics
- Additional Feature LOW THRESHOLD
- Configuration SINGLE WITH BUILT-IN DIODE
- Continuous Drain Current (ID) 5A
- Current - Continuous Drain (Id) @ 25°C 5A Ta
- Current Rating 5.7A
- Drain Current-Max (Abs) (ID) 5A
- Drain to Source Breakdown Voltage 30V
- Drain-source On Resistance-Max 0.045Ohm
- Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
- ECCN Code EAR99
- Fall Time (Typ) 4.5 ns
- FET Type N-Channel
- Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V
- Gate to Source Voltage (Vgs) 20V
- Height 950μm
- Input Capacitance (Ciss) (Max) @ Vds 950pF @ 25V
- JESD-30 Code S-PDSO-G8
- JESD-609 Code e3
- Lead Free Lead Free
- Length 3.1mm
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- Mounting Type Surface Mount
- Number of Channels 1
- Number of Elements 1
- Number of Terminations 8
- Operating Mode ENHANCEMENT MODE
- Operating Temperature -55°C~150°C TJ
- Package / Case 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- Packaging Tape & Reel (TR)
- Part Status Obsolete
- Peak Reflow Temperature (Cel) 260
- Pin Count 8
- Power Dissipation 1.1W
- Power Dissipation-Max 1.1W Ta
- Qualification Status Not Qualified
- Rds On (Max) @ Id, Vgs 45m Ω @ 3.7A, 10V
- Rise Time 4.5ns
- RoHS Status RoHS Compliant
- Terminal Finish Matte Tin (Sn)
- Terminal Form GULL WING
- Terminal Position DUAL
- Time@Peak Reflow Temperature-Max (s) 40
- Transistor Application SWITCHING
- Transistor Element Material SILICON
- Turn On Delay Time 4.2 ns
- Turn-Off Delay Time 20.5 ns
- Vgs (Max) ±20V
- Vgs(th) (Max) @ Id 1V @ 250μA
- Voltage - Rated DC 30V
- Weight 139.989945mg
- Width 3.1mm
Product Description
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