JANTXV2N6849

JANTXV2N6849

Product Code: JANTXV2N6849
Availability: In Stock
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Price: $16.09
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Item specifics

  • Additional Feature RADIATION HARDENED
  • Avalanche Energy Rating (Eas) 500 mJ
  • Case Connection DRAIN
  • Configuration SINGLE WITH BUILT-IN DIODE
  • Continuous Drain Current (ID) 6.5A
  • Current - Continuous Drain (Id) @ 25°C 6.5A Tc
  • Drain to Source Voltage (Vdss) 100V
  • Drive Voltage (Max Rds On,Min Rds On) 10V
  • ECCN Code EAR99
  • FET Type P-Channel
  • Gate Charge (Qg) (Max) @ Vgs 34.8nC @ 10V
  • Gate to Source Voltage (Vgs) 20V
  • JESD-609 Code e0
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • Mount Through Hole
  • Mounting Type Through Hole
  • Number of Elements 1
  • Number of Pins 3
  • Number of Terminations 3
  • Operating Mode ENHANCEMENT MODE
  • Operating Temperature -55°C~150°C TJ
  • Package / Case TO-205AF Metal Can
  • Packaging Bulk
  • Part Status Obsolete
  • Pbfree Code no
  • Peak Reflow Temperature (Cel) NOT SPECIFIED
  • Power Dissipation 800mW
  • Power Dissipation-Max 800mW Ta 25W Tc
  • Published 1997
  • Pulsed Drain Current-Max (IDM) 25A
  • Qualification Status Qualified
  • Rds On (Max) @ Id, Vgs 320m Ω @ 6.5A, 10V
  • Reference Standard MILITARY STANDARD (USA)
  • RoHS Status Non-RoHS Compliant
  • Series Military, MIL-PRF-19500/564
  • Terminal Finish Tin/Lead (Sn/Pb)
  • Terminal Form WIRE
  • Terminal Position BOTTOM
  • Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
  • Transistor Application SWITCHING
  • Transistor Element Material SILICON
  • Vgs (Max) ±20V
  • Vgs(th) (Max) @ Id 4V @ 250μA

Product Description

Microsemi Corporation

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