NTMS4N01R2
Item specifics
- Additional Feature AVALANCHE RATED
- Configuration SINGLE WITH BUILT-IN DIODE
- Drain Current-Max (Abs) (ID) 3.3A
- Drain-source On Resistance-Max 0.04Ohm
- DS Breakdown Voltage-Min 20V
- Feedback Cap-Max (Crss) 100 pF
- FET Technology METAL-OXIDE SEMICONDUCTOR
- JESD-30 Code R-PDSO-G8
- JESD-609 Code e0
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- Number of Elements 1
- Number of Terminations 8
- Operating Mode ENHANCEMENT MODE
- Part Status Obsolete
- Pbfree Code yes
- Peak Reflow Temperature (Cel) 240
- Pin Count 8
- Polarity/Channel Type N-CHANNEL
- Qualification Status COMMERCIAL
- RoHS Status Non-RoHS Compliant
- Surface Mount YES
- Terminal Finish TIN LEAD
- Terminal Form GULL WING
- Terminal Position DUAL
- Time@Peak Reflow Temperature-Max (s) 30
- Transistor Application SWITCHING
- Transistor Element Material SILICON
Product Description
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