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APT38N60SC6
APT38N60SC6

APT38N60SC6

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Product Code: APT38N60SC6
Availability: In Stock
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Price: $14.29
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Item specifics

  • Additional Feature AVALANCHE RATED, ULTRA LOW RESISTANCE
  • Avalanche Energy Rating (Eas) 796 mJ
  • Case Connection DRAIN
  • Configuration SINGLE WITH BUILT-IN DIODE
  • Current - Continuous Drain (Id) @ 25°C 38A Tc
  • Drain Current-Max (Abs) (ID) 38A
  • Drain to Source Voltage (Vdss) 600V
  • Drain-source On Resistance-Max 0.099Ohm
  • Drive Voltage (Max Rds On,Min Rds On) 10V
  • DS Breakdown Voltage-Min 600V
  • ECCN Code EAR99
  • FET Type N-Channel
  • Gate Charge (Qg) (Max) @ Vgs 112nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds 2826pF @ 25V
  • JESD-30 Code R-PSSO-G2
  • JESD-609 Code e3
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • Mounting Type Surface Mount
  • Number of Elements 1
  • Number of Terminations 2
  • Operating Mode ENHANCEMENT MODE
  • Operating Temperature -55°C~150°C TJ
  • Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Packaging Bulk
  • Part Status Active
  • Pin Count 3
  • Power Dissipation-Max 278W Tc
  • Pulsed Drain Current-Max (IDM) 112A
  • Rds On (Max) @ Id, Vgs 99m Ω @ 18A, 10V
  • RoHS Status Non-RoHS Compliant
  • Series CoolMOS™
  • Surface Mount YES
  • Terminal Finish TIN
  • Terminal Form GULL WING
  • Terminal Position SINGLE
  • Transistor Element Material SILICON
  • Vgs (Max) ±20V
  • Vgs(th) (Max) @ Id 3.5V @ 1.2mA

Product Description

Microsemi Corporation

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