APTM100DA18T1G

APTM100DA18T1G

Product Code: APTM100DA18T1G
Availability: In Stock
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Price: $2.81
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Item specifics

  • Additional Feature AVALANCHE RATED
  • Case Connection ISOLATED
  • Configuration SINGLE WITH BUILT-IN DIODE AND THERMISTOR
  • Continuous Drain Current (ID) 40A
  • Current - Continuous Drain (Id) @ 25°C 40A Tc
  • Drain to Source Voltage (Vdss) 1000V
  • Drive Voltage (Max Rds On,Min Rds On) 10V
  • ECCN Code EAR99
  • FET Type N-Channel
  • Gate Charge (Qg) (Max) @ Vgs 570nC @ 10V
  • Gate to Source Voltage (Vgs) 30V
  • Input Capacitance (Ciss) (Max) @ Vds 14800pF @ 25V
  • JESD-609 Code e1
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • Mount Chassis Mount, Screw
  • Mounting Type Chassis Mount
  • Number of Elements 1
  • Number of Pins 1
  • Number of Terminations 12
  • Operating Mode ENHANCEMENT MODE
  • Operating Temperature -40°C~150°C TJ
  • Package / Case SP1
  • Packaging Bulk
  • Part Status Obsolete
  • Peak Reflow Temperature (Cel) NOT SPECIFIED
  • Pin Count 12
  • Power Dissipation 657W
  • Power Dissipation-Max 657W Tc
  • Published 2007
  • Pulsed Drain Current-Max (IDM) 260A
  • Qualification Status Not Qualified
  • Rds On (Max) @ Id, Vgs 216m Ω @ 33A, 10V
  • Reach Compliance Code unknown
  • RoHS Status RoHS Compliant
  • Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
  • Terminal Form UNSPECIFIED
  • Terminal Position UPPER
  • Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
  • Transistor Application SWITCHING
  • Transistor Element Material SILICON
  • Vgs (Max) ±30V
  • Vgs(th) (Max) @ Id 5V @ 2.5mA

Product Description

Microsemi Corporation

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