APTM20UM05SG

APTM20UM05SG

Product Code: APTM20UM05SG
Availability: In Stock
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Price: $12.10
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Item specifics

  • Avalanche Energy Rating (Eas) 2500 mJ
  • Case Connection ISOLATED
  • Configuration SINGLE WITH BUILT-IN DIODE AND RESISTOR
  • Continuous Drain Current (ID) 317A
  • Current - Continuous Drain (Id) @ 25°C 317A Tc
  • Drain to Source Voltage (Vdss) 200V
  • Drain-source On Resistance-Max 0.005Ohm
  • Drive Voltage (Max Rds On,Min Rds On) 10V
  • DS Breakdown Voltage-Min 200V
  • ECCN Code EAR99
  • FET Type N-Channel
  • Gate Charge (Qg) (Max) @ Vgs 448nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds 27400pF @ 25V
  • JESD-30 Code R-XUFM-X4
  • JESD-609 Code e1
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • Mount Chassis Mount
  • Mounting Type Chassis Mount
  • Number of Elements 1
  • Number of Terminations 4
  • Operating Mode ENHANCEMENT MODE
  • Operating Temperature -40°C~150°C TJ
  • Package / Case J3 Module
  • Packaging Bulk
  • Part Status Discontinued
  • Pbfree Code yes
  • Peak Reflow Temperature (Cel) NOT SPECIFIED
  • Power Dissipation-Max 1136W Tc
  • Published 2004
  • Pulsed Drain Current-Max (IDM) 1268A
  • Qualification Status Not Qualified
  • Rds On (Max) @ Id, Vgs 5m Ω @ 158.5A, 10V
  • RoHS Status RoHS Compliant
  • Terminal Finish TIN SILVER COPPER
  • Terminal Form UNSPECIFIED
  • Terminal Position UPPER
  • Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
  • Transistor Application SWITCHING
  • Transistor Element Material SILICON
  • Vgs (Max) ±30V
  • Vgs(th) (Max) @ Id 5V @ 10mA

Product Description

Microsemi Corporation

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