SIR870ADP-T1-GE3
Item specifics
- Case Connection DRAIN
- Contact Plating Tin
- Continuous Drain Current (ID) 60A
- Current - Continuous Drain (Id) @ 25°C 60A Tc
- Drain to Source Breakdown Voltage 100V
- Drain-source On Resistance-Max 0.007Ohm
- Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
- ECCN Code EAR99
- Element Configuration Single
- Fall Time (Typ) 9 ns
- FET Type N-Channel
- Gate Charge (Qg) (Max) @ Vgs 80nC @ 10V
- Gate to Source Voltage (Vgs) 20V
- Height 1.12mm
- Input Capacitance (Ciss) (Max) @ Vds 2866pF @ 50V
- JESD-30 Code R-PDSO-C5
- JESD-609 Code e3
- Lead Free Lead Free
- Length 6.25mm
- Max Junction Temperature (Tj) 150°C
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- Mount Surface Mount
- Mounting Type Surface Mount
- Number of Channels 1
- Number of Elements 1
- Number of Pins 8
- Number of Terminations 5
- Operating Mode ENHANCEMENT MODE
- Operating Temperature -55°C~150°C TJ
- Package / Case PowerPAK® SO-8
- Packaging Cut Tape (CT)
- Part Status Active
- Power Dissipation 104W
- Power Dissipation-Max 6.25W Ta 104W Tc
- Published 2013
- Pulsed Drain Current-Max (IDM) 300A
- Radiation Hardening No
- Rds On (Max) @ Id, Vgs 6.6m Ω @ 20A, 10V
- REACH SVHC Unknown
- Rise Time 15ns
- RoHS Status ROHS3 Compliant
- Series TrenchFET®
- Terminal Form C BEND
- Terminal Position DUAL
- Threshold Voltage 3V
- Transistor Application SWITCHING
- Transistor Element Material SILICON
- Turn On Delay Time 13 ns
- Turn-Off Delay Time 35 ns
- Vgs (Max) ±20V
- Vgs(th) (Max) @ Id 3V @ 250μA
- Weight 506.605978mg
- Width 5.26mm
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