STW70N60M2

STW70N60M2

Product Code: STW70N60M2
Availability: In Stock
Viewed 5 times
Price: $4.08
0 sold. Only 6000 remain

Item specifics

  • Avalanche Energy Rating (Eas) 9000 mJ
  • Base Part Number STW70N
  • Contact Plating Tin
  • Continuous Drain Current (ID) 68A
  • Current - Continuous Drain (Id) @ 25°C 68A Tc
  • Drain to Source Voltage (Vdss) 600V
  • Drain-source On Resistance-Max 0.04Ohm
  • Drive Voltage (Max Rds On,Min Rds On) 10V
  • DS Breakdown Voltage-Min 600V
  • ECCN Code EAR99
  • Element Configuration Single
  • Fall Time (Typ) 9 ns
  • FET Type N-Channel
  • Gate Charge (Qg) (Max) @ Vgs 118nC @ 10V
  • Gate to Source Voltage (Vgs) 25V
  • Input Capacitance (Ciss) (Max) @ Vds 5200pF @ 100V
  • Lead Free Lead Free
  • Lifecycle Status ACTIVE (Last Updated: 8 months ago)
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • Mount Through Hole
  • Mounting Type Through Hole
  • Number of Channels 1
  • Number of Elements 1
  • Number of Pins 3
  • Number of Terminations 3
  • Operating Mode ENHANCEMENT MODE
  • Operating Temperature -55°C~150°C TJ
  • Package / Case TO-247-3
  • Packaging Tube
  • Part Status Active
  • Power Dissipation 450W
  • Power Dissipation-Max 450W Tc
  • Pulsed Drain Current-Max (IDM) 272A
  • Radiation Hardening No
  • Rds On (Max) @ Id, Vgs 40m Ω @ 34A, 10V
  • REACH SVHC No SVHC
  • Rise Time 17ns
  • RoHS Status ROHS3 Compliant
  • Series MDmesh™ II Plus
  • Threshold Voltage 3V
  • Transistor Application SWITCHING
  • Transistor Element Material SILICON
  • Turn On Delay Time 32 ns
  • Turn-Off Delay Time 155 ns
  • Vgs (Max) ±25V
  • Vgs(th) (Max) @ Id 4V @ 250μA
  • Weight 38.000013g

Product Description

STMicroelectronics

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