STB4NK60Z-1

STB4NK60Z-1

Product Code: STB4NK60Z-1
Availability: In Stock
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Price: $6.35
0 sold. Only 490 remain

Item specifics

  • Avalanche Energy Rating (Eas) 120 mJ
  • Base Part Number STB4N
  • Continuous Drain Current (ID) 4A
  • Current - Continuous Drain (Id) @ 25°C 4A Tc
  • Drain Current-Max (Abs) (ID) 4A
  • Drain to Source Breakdown Voltage 600V
  • Drain-source On Resistance-Max 2Ohm
  • Drive Voltage (Max Rds On,Min Rds On) 10V
  • ECCN Code EAR99
  • Element Configuration Single
  • Fall Time (Typ) 16.5 ns
  • FET Type N-Channel
  • Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V
  • Gate to Source Voltage (Vgs) 30V
  • Input Capacitance (Ciss) (Max) @ Vds 510pF @ 25V
  • JESD-609 Code e3
  • Lifecycle Status ACTIVE (Last Updated: 8 months ago)
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • Mount Through Hole
  • Mounting Type Through Hole
  • Number of Elements 1
  • Number of Pins 3
  • Number of Terminations 3
  • Operating Mode ENHANCEMENT MODE
  • Operating Temperature 150°C TJ
  • Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
  • Packaging Tube
  • Part Status Not For New Designs
  • Pin Count 3
  • Power Dissipation 70W
  • Power Dissipation-Max 70W Tc
  • Pulsed Drain Current-Max (IDM) 16A
  • Radiation Hardening No
  • Rds On (Max) @ Id, Vgs 2 Ω @ 2A, 10V
  • Rise Time 9.5ns
  • RoHS Status ROHS3 Compliant
  • Series SuperMESH™
  • Terminal Finish Matte Tin (Sn) - annealed
  • Transistor Application SWITCHING
  • Transistor Element Material SILICON
  • Turn On Delay Time 12 ns
  • Turn-Off Delay Time 29 ns
  • Vgs (Max) ±30V
  • Vgs(th) (Max) @ Id 4.5V @ 50μA

Product Description

STMicroelectronics

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