MLD1N06CLT4G
Item specifics
- Additional Feature LOGIC LEVEL COMPATIBLE
- Applications General Purpose
- Avalanche Energy Rating (Eas) 80 mJ
- Base Part Number MLD1N06C
- Continuous Drain Current (ID) 1A
- Current Rating 1A
- Drain Current-Max (Abs) (ID) 1A
- Drain to Source Breakdown Voltage 59V
- Drain to Source Resistance 750mOhm
- Drain to Source Voltage (Vdss) 62V
- ECCN Code EAR99
- Element Configuration Single
- Fall Time (Typ) 3 ns
- FET Technology METAL-OXIDE SEMICONDUCTOR
- Gate to Source Voltage (Vgs) 10V
- Halogen Free Halogen Free
- JESD-30 Code R-PSSO-G2
- JESD-609 Code e3
- Lead Free Lead Free
- Lifecycle Status OBSOLETE (Last Updated: 14 hours ago)
- Max Operating Temperature 150°C
- Max Power Dissipation 40W
- Min Operating Temperature -55°C
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- Mounting Type Surface Mount
- Nominal Vgs 1.5 V
- Number of Elements 1
- Number of Pins 3
- Number of Terminations 2
- Operating Mode ENHANCEMENT MODE
- Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
- Packaging Tape & Reel (TR)
- Part Status Obsolete
- Pbfree Code yes
- Peak Reflow Temperature (Cel) 260
- Pin Count 3
- Power Dissipation 40W
- Published 2006
- Radiation Hardening No
- REACH SVHC No SVHC
- Resistance 750MOhm
- Rise Time 4ns
- RoHS Status RoHS Compliant
- Series SMARTDISCRETES™
- Surface Mount YES
- Terminal Finish Tin (Sn)
- Terminal Form GULL WING
- Threshold Voltage 1.5V
- Time@Peak Reflow Temperature-Max (s) 40
- Transistor Application SWITCHING
- Transistor Type NPN, N-Channel Gate-Drain, Source Clamp
- Turn On Delay Time 1.2 ns
- Turn-Off Delay Time 4 ns
- Voltage - Rated DC 62V
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