IR2130D

IR2130D

Product Code: IR2130D
Availability: In Stock
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Price: $12.12
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Item specifics

  • Bridge Type 3-Phase Bridge|Half Bridge
  • Driver Configuration Non-Inverting
  • Driver Type High and Low Side
  • ECCN (US) EAR99
  • ECCN Code EAR99
  • High and Low Sides Dependency Independent
  • High Side Driver YES
  • HTS 8542.39.00.01
  • HTS Code 8542.39.00.01
  • Input Logic Compatibility 5V|CMOS|LSTTL
  • Interface IC Type HALF BRIDGE BASED MOSFET DRIVER
  • JESD-30 Code R-PDIP-T28
  • Length 35.64 mm
  • Manufacturer Infineon Technologies AG
  • Maximum Fall Time (ns) 55
  • Maximum Operating Supply Voltage (V) 20
  • Maximum Operating Temperature (°C) 125
  • Maximum Power Dissipation (mW) 1500
  • Maximum Propagation Delay Time (ns) 850
  • Maximum Rise Time (ns) 125
  • Minimum Operating Supply Voltage (V) 10
  • Minimum Operating Temperature (°C) -55
  • Mounting Through Hole
  • Number of Drivers 6
  • Number of Functions 3
  • Number of Outputs 6
  • Number of Terminals 28
  • Output Peak Current Limit-Nom 0.5 A
  • Package Height 3.15(Max)
  • Package Length 36.22(Max)
  • Package Shape RECTANGULAR
  • Package Width 15.49(Max)
  • Part Status Active
  • PCB changed 28
  • Peak Output Current (A) 0.5(Typ)
  • Peak Reflow Temperature (Cel) NOT SPECIFIED
  • Pin Count 28
  • Power Supplies 15 V
  • Qualification Status Not Qualified
  • Reach Compliance Code unknown
  • Reference Voltage (V) 400(Max)
  • RoHS Status RoHS non-compliant
  • Seated Height-Max 4.8 mm
  • Special Feature Undervoltage Lockout|Current Limit
  • Standard Package Name MO-038AB
  • Subcategory MOSFET Drivers
  • Supplier Package MO-038AB
  • Supply Voltage1-Max 20 V
  • Supply Voltage1-Min 10 V
  • Supply Voltage1-Nom 15 V
  • Surface Mount NO
  • Technology BICMOS
  • Temperature Grade MILITARY
  • Terminal Form THROUGH-HOLE
  • Terminal Pitch 2.54 mm
  • Terminal Position DUAL
  • Type MOSFET|IGBT
  • Typical Input High Threshold Voltage (V) 2.2(Min)
  • Typical Input Low Threshold Voltage (V) 0.8(Max)
  • Width 15.24 mm

Product Description

Infineon Technologies AG

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